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Samsung M378B5673FH0-CH9 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB

Samsung M378B5673FH0-CH9 2GB vs Micron Technology 8ATF51264AZ-2G1A2 4GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 36
    左右 3% 更低的延时
Micron Technology 8ATF51264AZ-2G1A2 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 36
  • 读取速度，GB/s
    14.4 left arrow 15.8
  • 写入速度，GB/s
    9.5 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2417

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Micron Technology 8ATF51264AZ-2G1A2 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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