Samsung M378B5673FH0-CH9 2GB vs Samsung M471A1G43EB1-CRC 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

更快的写入速度，GB/s

9.5 9.3

测试中的平均数值

Samsung M471A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M471A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 -40% 更低的延时
更快的读取速度，GB/s

14.8 14.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Samsung M471A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 25
读取速度，GB/s

14.4 14.8
写入速度，GB/s

9.5 9.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2321 2340

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMU64GX4M4D3000C16 16GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Samsung M471A1G43EB1-CRC 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 9905630-039.A00G 16GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMK16GX4M2C3600C20 8GB

Corsair CMK16GX4M2C3600C20 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB