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Samsung M378B5673FH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Samsung M378B5673FH0-CH9 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 56
    左右 38% 更低的延时
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
报告一个错误
  • 更快的读取速度，GB/s
    20.1 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 56
  • 读取速度，GB/s
    14.4 left arrow 20.1
  • 写入速度，GB/s
    9.5 left arrow 10.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2455

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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SK Hynix HYMP31GF72CMP4D5Y5 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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内存RAM
Kingston ACR256X64D3S1333C9 2GB
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Corsair CM4X8GF2666C18S2 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
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Corsair CMD128GX4M8A2666C15 16GB
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Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
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Corsair CM4B8G2J3000K15K 8GB
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Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2400C15D4/4G 4GB
Kingston KHX2400C15D4/4G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CM4B8G2J2666A15D 8GB
内存RAM
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Kingston 9905471-076.A00LF 8GB
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A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM
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Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-3400C16-16GVR 16GB
G Skill Intl F4-3400C16-16GVR 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Transcend Information TS1GLH64V4B 8GB
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内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
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Kingston 9905471-006.A01LF 4GB
Kingston X0N6VG-HYD2 16GB
Kingston X0N6VG-HYD2 16GB
内存RAM
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Micron Technology 16JTF25664AZ-1G4F1 2GB
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AMD R948G2806U2S 8GB
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