Samsung M378B5773DH0-CH9 2GB vs A-DATA Technology DDR4 3200 2OZ 4GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

A-DATA Technology DDR4 3200 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 -34% 更低的延时
更快的读取速度，GB/s

17.2 11.7

测试中的平均数值
更快的写入速度，GB/s

13.8 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

A-DATA Technology DDR4 3200 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 29
读取速度，GB/s

11.7 17.2
写入速度，GB/s

7.2 13.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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AMD R538G1601U2S-UO 8GB

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Corsair CM4X4GF2400C16K4 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Kingston 9905403-156.A00LF 2GB

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Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Transcend Information TS9W9NESD-I 8GB

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Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

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Avant Technology F641GU67F9333G 8GB

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Crucial Technology BLS8G4D240FSB.M16FAD 8GB