Samsung M378B5773DH0-CH9 2GB vs Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

需要考虑的原因
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 39

左右 -26% 更低的延时
更快的读取速度，GB/s

16.7 11.7

测试中的平均数值
更快的写入速度，GB/s

13.9 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 31
读取速度，GB/s

11.7 16.7
写入速度，GB/s

7.2 13.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1749 3168

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Corsair CM4B4G1J2400A14K 4GB

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Samsung M378B5673FH0-CH9 2GB

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Avant Technology J642GU42J7240NF 16GB

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Kingston ACR16D3LS1NGG/4G 4GB

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Samsung M378T5663QZ3-CF7 2GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Kingston 9965589-033.D00G 8GB

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Kingston 9965525-018.A00LF 4GB

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Corsair CMU32GX4M4C3200C16 8GB

Corsair CMU32GX4M4C3200C16 8GB

Kingston KHX1600C10D3/8GXF 8GB

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Kingston 9905678-058.A00G 4GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

SK Hynix HMA82GR7AFR4N-TF 16GB

SK Hynix HMA82GR7AFR4N-TF 16GB

Samsung M471B5273DH0-CH9 4GB

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Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB