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Samsung M378B5773DH0-CH9 2GB
Corsair CMK64GX4M4A2133C13 16GB

Samsung M378B5773DH0-CH9 2GB vs Corsair CMK64GX4M4A2133C13 16GB

总分
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
Corsair CMK64GX4M4A2133C13 16GB

Corsair CMK64GX4M4A2133C13 16GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
Corsair CMK64GX4M4A2133C13 16GB 需要考虑的原因
Corsair CMK64GX4M4A2133C13 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 39
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Corsair CMK64GX4M4A2133C13 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 38
  • 读取速度，GB/s
    11.7 left arrow 14.3
  • 写入速度，GB/s
    7.2 left arrow 11.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 2988

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

Corsair CMK64GX4M4A2133C13 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingmax Semiconductor KLDE88F-B8MO5 2GB
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内存RAM
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Crucial Technology CT25664AA800.M16FG 2GB
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内存RAM
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Crucial Technology BL8G26C16S4B.8FD 8GB
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内存RAM
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
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Kingston 9905702-006.A00G 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905712-001.B00G 16GB
Kingston 9905712-001.B00G 16GB
内存RAM