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Samsung M378B5773DH0-CH9 2GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB

Samsung M378B5773DH0-CH9 2GB vs Crucial Technology BL8G30C15U4B.M8FE1 8GB

总分
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
Crucial Technology BL8G30C15U4B.M8FE1 8GB

Crucial Technology BL8G30C15U4B.M8FE1 8GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
Crucial Technology BL8G30C15U4B.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4B.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 39
    左右 -39% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 28
  • 读取速度，GB/s
    11.7 left arrow 17.9
  • 写入速度，GB/s
    7.2 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 3453

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

Crucial Technology BL8G30C15U4B.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Crucial Technology BL8G32C16U4R.8FE 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
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内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
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AMD R5S38G1601U2S 8GB
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内存RAM
A-DATA Technology DOVF1B163G2G 2GB
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Samsung M471B5673FH0-CF8 2GB
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内存RAM
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Corsair CMT32GX4M2C3200C14 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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Kingston 9965525-155.A00LF 8GB
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内存RAM
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内存RAM
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PNY Electronics PNY 2GB
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内存RAM
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Corsair CMX8GX3M2A1600C11 4GB
Transcend Information TS1GLH64V4H 8GB
Transcend Information TS1GLH64V4H 8GB
内存RAM
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内存RAM