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Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
比较
Samsung M378B5773DH0-CH9 2GB vs Crucial Technology BLS8G4S26BFSDK.8FD 8GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
39
41
左右 5% 更低的延时
需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
报告一个错误
更快的写入速度,GB/s
9.5
7.2
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
41
读取速度,GB/s
11.7
11.7
写入速度,GB/s
7.2
9.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1749
2058
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905625-139.A00G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 9905702-007.A00G 8GB
Nanya Technology NT1GT64U8HB0BN-3C 1GB
Kingston KF3000C15D4/8GX 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK64GX4M8X3600C18 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMA425S6AFR6N-UH 2GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
报告一个错误
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Bug description
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