Samsung M378B5773DH0-CH9 2GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

更快的写入速度，GB/s

7.2 6.6

测试中的平均数值

Crucial Technology CT4G4DFS824A.M8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 39

左右 -63% 更低的延时
更快的读取速度，GB/s

12 11.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 24
读取速度，GB/s

11.7 12.0
写入速度，GB/s

7.2 6.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 1433

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA42GR7AFR4N-TF 16GB

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Corsair CMSX64GX4M2A2933C19 32GB

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Crucial Technology CT16G4DFD8213.M16FB 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Chun Well Technology Holding Limited D4U1636144B 16GB

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Kingston SNY1333D3S9ELC/4G 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB