Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-3000C14-8GVK 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

G Skill Intl F4-3000C14-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3000C14-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 -44% 更低的延时
更快的读取速度，GB/s

17.4 11.7

测试中的平均数值
更快的写入速度，GB/s

14.1 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3000C14-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 27
读取速度，GB/s

11.7 17.4
写入速度，GB/s

7.2 14.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 3557

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D240FSB.16FD 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Crucial Technology BLS4G4D240FSA.M8FADM 4GB

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Patriot Memory (PDP Systems) PSD48G266682 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Kingston KYXC0V-MID 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Apacer Technology 78.CAGR9.40C0B 8GB

Apacer Technology 78.CAGR9.40C0B 8GB

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Kingston HP24D4U7S8MH-8 8GB