Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-3000C15-4GRBB 4GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

G Skill Intl F4-3000C15-4GRBB 4GB

G Skill Intl F4-3000C15-4GRBB 4GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

G Skill Intl F4-3000C15-4GRBB 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GRBB 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 39

左右 -18% 更低的延时
更快的读取速度，GB/s

15.8 11.7

测试中的平均数值
更快的写入速度，GB/s

12.5 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3000C15-4GRBB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 33
读取速度，GB/s

11.7 15.8
写入速度，GB/s

7.2 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KP223C-ELD 2GB

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G Skill Intl F4-3200C15-16GVR 16GB

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Team Group Inc. Vulcan-1600 4GB

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Crucial Technology BLS4G4D240FSB.8FADG 4GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Apacer Technology 78.C1GS7.AUC0B 8GB

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Kingston LV32D4U2S8ME-16X 16GB

Kingston LV32D4U2S8ME-16X 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Panram International Corporation R748G2133U2S 8GB

Panram International Corporation R748G2133U2S 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston KC5N22-MIE 16GB

Kingston KC5N22-MIE 16GB