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Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C19-16GTRS 16GB

Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-4000C19-16GTRS 16GB

总分
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
G Skill Intl F4-4000C19-16GTRS 16GB

G Skill Intl F4-4000C19-16GTRS 16GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
G Skill Intl F4-4000C19-16GTRS 16GB 需要考虑的原因
G Skill Intl F4-4000C19-16GTRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 39
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C19-16GTRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 32
  • 读取速度，GB/s
    11.7 left arrow 17.0
  • 写入速度，GB/s
    7.2 left arrow 13.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 3227

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

G Skill Intl F4-4000C19-16GTRS 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C19-16GTRS 16GB
G Skill Intl F4-4000C19-16GTRS 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMD64GX4M8B3200C16 8GB
Corsair CMD64GX4M8B3200C16 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Gloway International (HK) STKD4GAM2133-F 8GB
Gloway International (HK) STKD4GAM2133-F 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Asgard VMA41UH-MEC1U2AW1 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
内存RAM
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology AD5U48008G-B 8GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C14-8GTZRA 8GB
G Skill Intl F4-3600C14-8GTZRA 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3600C16-16GTZR 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 9905625-004.A03LF 8GB
Micron Technology 9905625-004.A03LF 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
内存RAM