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Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
比较
Samsung M378B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
39
左右 -44% 更低的延时
更快的读取速度,GB/s
14.6
11.7
测试中的平均数值
更快的写入速度,GB/s
10.5
7.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
27
读取速度,GB/s
11.7
14.6
写入速度,GB/s
7.2
10.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1749
2409
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5673FH0-CH9 2GB
Kingston KHX3600C17D4/16GX 16GB
Kingston 9905403-156.A00LF 2GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMW16GX4M2E3200C16 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Samsung M471B5273DH0-CH9 4GB
Kingston HP16D3LS1KFG/4G 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.CAGMT.40C0B 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW16GX4M2C3200C14 8GB
A-DATA Technology DDR3 1600 4GB
Samsung M378A5244BB0-CRC 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3600C18-8GTRG 8GB
Kingston KHX1600C9D3/4GX 4GB
Kingston 9905701-008.A00G 16GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3200C14-32GTRS 32GB
Kingston 99U5584-007.A00LF 4GB
Samsung M471A1G43EB1-CRC 8GB
报告一个错误
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Bug description
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