Samsung M378B5773DH0-CH9 2GB vs Kingmax Semiconductor GLNH23F-18---------- 16GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Kingmax Semiconductor GLNH23F-18---------- 16GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 67

左右 42% 更低的延时

Kingmax Semiconductor GLNH23F-18---------- 16GB

需要考虑的原因
Kingmax Semiconductor GLNH23F-18---------- 16GB

报告一个错误

更快的读取速度，GB/s

16 11.7

测试中的平均数值
更快的写入速度，GB/s

8.5 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 67
读取速度，GB/s

11.7 16.0
写入速度，GB/s

7.2 8.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 2030

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-444.A00LF 4GB

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Kingston HP26D4U9S8MD-8 8GB

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Elpida EBJ40UG8EFU5-GNL-F 4GB

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Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

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Kingston SNY1333D3S9DR8/2G 2GB

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Kingston ACR16D3LU1KNG/4G 4GB

Kingston ACR16D3LU1KNG/4G 4GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

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Kingston MSI24D4S7S8MH-8 8GB

Kingston MSI24D4S7S8MH-8 8GB

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Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB