Samsung M378B5773DH0-CH9 2GB vs Kingston 9905624-018.A00G 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Kingston 9905624-018.A00G 8GB

Kingston 9905624-018.A00G 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Kingston 9905624-018.A00G 8GB

需要考虑的原因
Kingston 9905624-018.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 -30% 更低的延时
更快的读取速度，GB/s

15.7 11.7

测试中的平均数值
更快的写入速度，GB/s

11.8 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Kingston 9905624-018.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 30
读取速度，GB/s

11.7 15.7
写入速度，GB/s

7.2 11.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 2438

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Kingston KHX2800C14D4/8GX 8GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston 9905624-018.A00G 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Corsair CM4X8GF2400Z16K4 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kllisre M378A5143EB2-CRC 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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A-DATA Technology AM2P32NC8W1-BCFS 8GB

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SK Hynix HMA81GU6DJR8N-XN 8GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CT8G4DFS824A.M8FE 8GB

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Samsung M378A5244CB0-CTD 4GB

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G Skill Intl F4-2133C15-4GVK 4GB

G Skill Intl F4-2133C15-4GVK 4GB

Corsair CMY8GX3M2A2133C8 4GB

Corsair CMY8GX3M2A2133C8 4GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

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G Skill Intl F4-3466C16-16GTZSW 16GB

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Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB