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Samsung M378B5773DH0-CH9 2GB
Kingston K000MD44U 4GB

Samsung M378B5773DH0-CH9 2GB vs Kingston K000MD44U 4GB

总分
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
Kingston K000MD44U 4GB 需要考虑的原因
Kingston K000MD44U 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Kingston K000MD44U 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 39
  • 读取速度，GB/s
    11.7 left arrow 14.9
  • 写入速度，GB/s
    7.2 left arrow 9.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 2262

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

Kingston K000MD44U 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX3200C20S4/8G 8GB
Kingston KHX3200C20S4/8G 8GB
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Kingston KVR533D2N4 512MB
Kingston 9965604-008.C00G 8GB
Kingston 9965604-008.C00G 8GB
内存RAM
SK Hynix HMT451S6BFR8A-RD 4GB
SK Hynix HMT451S6BFR8A-RD 4GB
A-DATA Technology AX5U5200C3816G-B 16GB
A-DATA Technology AX5U5200C3816G-B 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Corsair CMT32GX4M4C3600C18 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GS6JJR8N-VK 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Corsair CMK64GX4M4C3000C15 16GB
Corsair CMK64GX4M4C3000C15 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P32NCSV1-BEWS 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMW64GX4M8C3000C15 8GB
Corsair CMW64GX4M8C3000C15 8GB
内存RAM