Samsung M378B5773DH0-CH9 2GB vs Kingston KHX2133C14S4/8G 8GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Kingston KHX2133C14S4/8G 8GB

Kingston KHX2133C14S4/8G 8GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Kingston KHX2133C14S4/8G 8GB

需要考虑的原因
Kingston KHX2133C14S4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 -50% 更低的延时
更快的读取速度，GB/s

16.1 11.7

测试中的平均数值
更快的写入速度，GB/s

11.8 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Kingston KHX2133C14S4/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 26
读取速度，GB/s

11.7 16.1
写入速度，GB/s

7.2 11.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1749 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-Y5 1GB

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Kingston 9905469-153.A00LF 4GB

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Kingston XRGM6C-MIE 16GB

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Kingston KVR16N11/8-SP 8GB

Corsair CMV16GX4M1A2400C16 16GB

Corsair CMV16GX4M1A2400C16 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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G Skill Intl F4-2133C15-8GNT 8GB

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Kingston KP223C-ELD 2GB

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Kingston 9905701-003.A00G 16GB