Samsung M378B5773DH0-CH9 2GB vs SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 39

左右 -8% 更低的延时
更快的读取速度，GB/s

15 11.7

测试中的平均数值
更快的写入速度，GB/s

10.1 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

SK Hynix HMA82GS6CJR8N-VK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 36
读取速度，GB/s

11.7 15.0
写入速度，GB/s

7.2 10.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1749 2657

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3000C14-16GVR 16GB

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Micron Technology 16ATF4G64HZ-3G2E2 32GB

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ASint Technology SSA302G08-EGN1C 4GB

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G Skill Intl F4-3000C16-8GSXWB 8GB

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Samsung M378B5773DH0-CH9 2GB

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Samsung M471A5644EB0-CPB 2GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Gold Key Technology Co Ltd NMUD480E86-3200 8GB

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Kingston 9905625-036.A00G 16GB