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Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
比较
Samsung M378B5773DH0-CH9 2GB vs Wilk Elektronik S.A. GR3200D464L22/16G 16GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
需要考虑的原因
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
34
39
左右 -15% 更低的延时
更快的读取速度,GB/s
20.5
11.7
测试中的平均数值
更快的写入速度,GB/s
16.4
7.2
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
34
读取速度,GB/s
11.7
20.5
写入速度,GB/s
7.2
16.4
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1749
3616
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston ACR256X64D3S1333C9 2GB
Corsair CMK32GX4M1A2666C16 32GB
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Kingston KHX3200C18D4/16G 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Crucial Technology CT8G4DFS824A.M8FH 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-2400C15-16GFX 16GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
Corsair CM5S16GM4800A40K2 16GB
Corsair CM4X16GC3600C18K2D 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Kingston KHX3200C18D4/16G 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston KHX2400C14S4/16G 16GB
Apacer Technology 78.A1GC6.9H10C 2GB
Panram International Corporation PUD42133C154G2VS 4GB
报告一个错误
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