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Samsung M378B5773QB0-CK0 2GB
Kingston KVR16N11/8-SP 8GB

Samsung M378B5773QB0-CK0 2GB vs Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Samsung M378B5773QB0-CK0 2GB

Samsung M378B5773QB0-CK0 2GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

差异 规格 评论

差异

Samsung M378B5773QB0-CK0 2GB 需要考虑的原因
Samsung M378B5773QB0-CK0 2GB
报告一个错误
Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 40
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 8.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378B5773QB0-CK0 2GB
Kingston KVR16N11/8-SP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    40 left arrow 26
  • 读取速度，GB/s
    13.2 left arrow 13.9
  • 写入速度，GB/s
    8.3 left arrow 9.5
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1886 left arrow 2432

Samsung M378B5773QB0-CK0 2GB RAM的比较

Crucial Technology CT8G4DFS8213.M8FB 8GB

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9965600-005.A00G 16GB
Kingston 9965600-005.A00G 16GB
内存RAM
Samsung M378B5773QB0-CK0 2GB
Samsung M378B5773QB0-CK0 2GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
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Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
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Panram International Corporation PUD43000C164G2NJK 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Hynix Semiconductor (Hyundai Electronics) HMT451S6DFR8A
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
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Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Micron Technology 16HTF25664AY-800J1 2GB
Micron Technology 16HTF25664AY-800J1 2GB
Micron Technology 16HTF25664AY-800G1 2GB
Micron Technology 16HTF25664AY-800G1 2GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Kingston ACR26D4U9S8MH-8 8GB
Kingston ACR26D4U9S8MH-8 8GB
内存RAM
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Corsair CMY8GX3M2A2666C10 4GB
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Kingston 9965589-008.D02G 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
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Corsair CMR16GX4M2Z2933C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
内存RAM