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Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB

Samsung M378T5663QZ3-CF7 2GB vs Crucial Technology BL16G36C16U4WL.M16FE 16GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
Crucial Technology BL16G36C16U4WL.M16FE 16GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.8
    测试中的平均数值
Crucial Technology BL16G36C16U4WL.M16FE 16GB 需要考虑的原因
Crucial Technology BL16G36C16U4WL.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 56
    左右 -115% 更低的延时
  • 更快的写入速度，GB/s
    16.8 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 26
  • 读取速度，GB/s
    4,387.7 left arrow 19.8
  • 写入速度，GB/s
    1,813.5 left arrow 16.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    693 left arrow 4012

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905701-131.A00G 16GB
Kingston 9905701-131.A00G 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 9905743-044.A00G 16GB
Kingston 9905743-044.A00G 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
JUHOR JHD2666U1908JG 8GB
JUHOR JHD2666U1908JG 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Essencore Limited IM44GU48N26-GIIHA0 4GB
Essencore Limited IM44GU48N26-GIIHA0 4GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Transcend Information AQD-SD4U8GE21-SG 8GB
Transcend Information AQD-SD4U8GE21-SG 8GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C15-16GVR 16GB
G Skill Intl F4-3200C15-16GVR 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
内存RAM