Samsung M378T5663QZ3-CF7 2GB vs Kingston HP32D4U8S8ME-8XR 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Kingston HP32D4U8S8ME-8XR 8GB

Kingston HP32D4U8S8ME-8XR 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17.2

测试中的平均数值

Kingston HP32D4U8S8ME-8XR 8GB

需要考虑的原因
Kingston HP32D4U8S8ME-8XR 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 56

左右 -93% 更低的延时
更快的写入速度，GB/s

15.4 1,813.5

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Kingston HP32D4U8S8ME-8XR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 29
读取速度，GB/s

4,387.7 17.2
写入速度，GB/s

1,813.5 15.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

693 3461

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.A1GC6.9H10C 2GB

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Patriot Memory (PDP Systems) PSD44G266641 4GB

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Crucial Technology CT4G4DFS8266.M8FF 4GB

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Corsair CM4X8GD3000C16K4D 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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A-DATA Technology AO2P26KC8T1-BPYS 8GB

Corsair CML8GX3M2A1866C9 4GB

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Samsung M471A1K43DB1-CWE 8GB

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Kingston KF3200C20S4/16GX 16GB

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Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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G Skill Intl F4-2800C14-16GTZ 16GB