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Samsung M378T5663QZ3-CF7 2GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB

Samsung M378T5663QZ3-CF7 2GB vs Micron Technology 9ASF1G72PZ-2G3A1 8GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 10.2
    测试中的平均数值
Micron Technology 9ASF1G72PZ-2G3A1 8GB 需要考虑的原因
Micron Technology 9ASF1G72PZ-2G3A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    48 left arrow 56
    左右 -17% 更低的延时
  • 更快的写入速度，GB/s
    7.4 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 48
  • 读取速度，GB/s
    4,387.7 left arrow 10.2
  • 写入速度，GB/s
    1,813.5 left arrow 7.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    693 left arrow 2190

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4X16GE2666Z16K4 16GB
Corsair CM4X16GE2666Z16K4 16GB
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMW32GX4M2C3466C16 16GB
Corsair CMW32GX4M2C3466C16 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KHX2400C15S4/16G 16GB
Kingston KHX2400C15S4/16G 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J642GU42J9266N4 16GB
Avant Technology J642GU42J9266N4 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CM4X16GC3200C16K2E 16GB
Corsair CM4X16GC3200C16K2E 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
内存RAM