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Samsung M378T5663QZ3-CF7 2GB
Nanya Technology M2Y1G64TU88D4B-AC 1GB

Samsung M378T5663QZ3-CF7 2GB vs Nanya Technology M2Y1G64TU88D4B-AC 1GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
Nanya Technology M2Y1G64TU88D4B-AC 1GB

Nanya Technology M2Y1G64TU88D4B-AC 1GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    56 left arrow 71
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    1,813.5 left arrow 1,289.4
    测试中的平均数值
Nanya Technology M2Y1G64TU88D4B-AC 1GB 需要考虑的原因
Nanya Technology M2Y1G64TU88D4B-AC 1GB
报告一个错误

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Nanya Technology M2Y1G64TU88D4B-AC 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    56 left arrow 71
  • 读取速度，GB/s
    4,387.7 left arrow 3,244.6
  • 写入速度，GB/s
    1,813.5 left arrow 1,289.4
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    693 left arrow 520

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Nanya Technology M2Y1G64TU88D4B-AC 1GB RAM的比较

G Skill Intl F4-2800C16-4GVR 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Nanya Technology M2Y1G64TU88D4B-AC 1GB
Nanya Technology M2Y1G64TU88D4B-AC 1GB
内存RAM
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G Skill Intl F3-10600CL9-2GBNT 2GB
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-3200C16-16GTZN 16GB
内存RAM
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