Samsung M378T5663QZ3-CF7 2GB vs SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15.7

测试中的平均数值

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

报告一个错误

低于PassMark测试中的延时，ns

42 56

左右 -33% 更低的延时
更快的写入速度，GB/s

11.9 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 42
读取速度，GB/s

4,387.7 15.7
写入速度，GB/s

1,813.5 11.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 2737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D240FSA.M8F 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Micron Technology 16ATF2G64AZ-2G1B1 16GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung V-GeN D4S16GL32A8TS 16GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Samsung M471A2K43CB1-CRCR 16GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB