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Samsung M378T5663QZ3-CF7 2GB
V-Color Technology Inc. TN416G26D819-SB 16GB

Samsung M378T5663QZ3-CF7 2GB vs V-Color Technology Inc. TN416G26D819-SB 16GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15
    测试中的平均数值
V-Color Technology Inc. TN416G26D819-SB 16GB 需要考虑的原因
V-Color Technology Inc. TN416G26D819-SB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 56
    左右 -70% 更低的延时
  • 更快的写入速度，GB/s
    8.5 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
V-Color Technology Inc. TN416G26D819-SB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 33
  • 读取速度，GB/s
    4,387.7 left arrow 15.0
  • 写入速度，GB/s
    1,813.5 left arrow 8.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    693 left arrow 2524

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

V-Color Technology Inc. TN416G26D819-SB 16GB RAM的比较

Samsung M378A1K43DB2-CTD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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