Samsung M378T5663QZ3-CF7 2GB vs V-Color Technology Inc. TN416G26D819-SB 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值

V-Color Technology Inc. TN416G26D819-SB 16GB

需要考虑的原因
V-Color Technology Inc. TN416G26D819-SB 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 56

左右 -70% 更低的延时
更快的写入速度，GB/s

8.5 1,813.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

V-Color Technology Inc. TN416G26D819-SB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 33
读取速度，GB/s

4,387.7 15.0
写入速度，GB/s

1,813.5 8.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

693 2524

RAM Latency Calculator

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RAM 2

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