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Samsung M379B5273CH0-CH9 4GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB

Samsung M379B5273CH0-CH9 4GB vs Micron Technology 8ATF2G64HZ-3G2E1 16GB

总分
star star star star star
Samsung M379B5273CH0-CH9 4GB

Samsung M379B5273CH0-CH9 4GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

差异 规格 评论

差异

Samsung M379B5273CH0-CH9 4GB 需要考虑的原因
Samsung M379B5273CH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 23% 更低的延时
Micron Technology 8ATF2G64HZ-3G2E1 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M379B5273CH0-CH9 4GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 35
  • 读取速度，GB/s
    13.0 left arrow 15.7
  • 写入速度，GB/s
    8.0 left arrow 12.1
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2318 left arrow 3045

Samsung M379B5273CH0-CH9 4GB RAM的比较

SK Hynix HMT451U6BFR8C-PB 4GB
Corsair CMK64GX4M4B3466C16 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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