Samsung M386B4G70DM0-CMA4 32GB vs Crucial Technology BLS4G4D240FSB.8FAR 4GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Crucial Technology BLS4G4D240FSB.8FAR 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FAR 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 52

左右 -126% 更低的延时
更快的读取速度，GB/s

16.3 9.7

测试中的平均数值
更快的写入速度，GB/s

12.8 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 23
读取速度，GB/s

9.7 16.3
写入速度，GB/s

7.2 12.8
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2173 2809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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最新比较

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Samsung M386B4G70DM0-CMA4 32GB

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Samsung M471B5173QH0-YK0 4GB

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Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

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Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB