Samsung M386B4G70DM0-CMA4 32GB vs Crucial Technology BLS4G4D26BFSB.8FD2 4GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 52

左右 -189% 更低的延时
更快的读取速度，GB/s

21.1 9.7

测试中的平均数值
更快的写入速度，GB/s

16.7 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 18
读取速度，GB/s

9.7 21.1
写入速度，GB/s

7.2 16.7
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2173 3286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 991679ES 996679ES 2GB

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Apacer Technology 78.CAGP7.DFW0C 8GB

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Corsair CMK64GX4M4C3000C15 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Crucial Technology BLS8G4D30AESBK.M8FE 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMA82GR7MFR4N-UH 16GB

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Kingston 99U5474-010.A00LF 2GB

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SK Hynix HMA41GR7AFR8N-TF 8GB

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Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

G Skill Intl F4-2666C15-16GVK 16GB

G Skill Intl F4-2666C15-16GVK 16GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Kingston 9905599-029.A00G 4GB

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Kingston 9905471-002.A00LF 2GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Kingston KHYXPX-HYJ 8GB

Kingston KHYXPX-HYJ 8GB