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Samsung M4 70T2953EZ3-CE6 1GB
Kingston X6TCK6-MIE 32GB

Samsung M4 70T2953EZ3-CE6 1GB vs Kingston X6TCK6-MIE 32GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.2
    测试中的平均数值
Kingston X6TCK6-MIE 32GB 需要考虑的原因
Kingston X6TCK6-MIE 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 73
    左右 -115% 更低的延时
  • 更快的写入速度，GB/s
    12.8 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Kingston X6TCK6-MIE 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 34
  • 读取速度，GB/s
    3,510.5 left arrow 17.2
  • 写入速度，GB/s
    1,423.3 left arrow 12.8
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    476 left arrow 3288

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Kingston X6TCK6-MIE 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston X6TCK6-MIE 32GB
Kingston X6TCK6-MIE 32GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-2666C15-4GRR 4GB
G Skill Intl F4-2666C15-4GRR 4GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C17-8GVKB 8GB
G Skill Intl F4-4000C17-8GVKB 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Corsair CMH16GX4M2E3200C16 8GB
Corsair CMH16GX4M2E3200C16 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Avant Technology W641GU42J7240NB 8GB
Avant Technology W641GU42J7240NB 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Apacer Technology GD2.1527WT.001 8GB
Apacer Technology GD2.1527WT.001 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston XK2M26-MIE 16GB
Kingston XK2M26-MIE 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Ramaxel Technology RMUA5210ME88HCF-3200 32GB
Ramaxel Technology RMUA5210ME88HCF-3200 32GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Transcend Information TS2GLH64V4B 16GB
Transcend Information TS2GLH64V4B 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
SK Hynix HMA451R7AFR8N-UH 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
内存RAM