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Kingston 99U5429-007.A00LF 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
比较
Kingston 99U5429-007.A00LF 2GB vs InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
总分
Kingston 99U5429-007.A00LF 2GB
总分
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
更快的读取速度,GB/s
3
18
测试中的平均数值
更快的写入速度,GB/s
2,036.1
15.1
测试中的平均数值
需要考虑的原因
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
75
左右 -178% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
27
读取速度,GB/s
3,986.4
18.0
写入速度,GB/s
2,036.1
15.1
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
714
3711
Kingston 99U5429-007.A00LF 2GB RAM的比较
Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Smart Modular SF464128CKHIWDFSEG 4GB
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Essencore Limited KD4AGU88C-26N1900 16GB
Samsung M471A5244CB0-CWE 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
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Crucial Technology CB8GS2400.C8JT 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905678-105.A00G 8GB
报告一个错误
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Bug description
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