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Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB
比较
Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-3600C16-16GTZRC 16GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
G Skill Intl F4-3600C16-16GTZRC 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
28
左右 7% 更低的延时
需要考虑的原因
G Skill Intl F4-3600C16-16GTZRC 16GB
报告一个错误
更快的读取速度,GB/s
19.3
12.8
测试中的平均数值
更快的写入速度,GB/s
16.5
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
28
读取速度,GB/s
12.8
19.3
写入速度,GB/s
9.0
16.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2143
3889
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB
A-DATA Technology DQKD1A08 1GB
Corsair CMR32GX4M4D3200C16 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Hypertec G2RT-4AFT00 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Team Group Inc. TEAMGROUP-UD4-3866 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M2B2800C14 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Panram International Corporation PUD42133C158G2VS 8GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMW32GX4M2C3000C15 16GB
Samsung M386B4G70DM0-CMA4 32GB
Team Group Inc. DDR4 3600 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMK32GX4M4B3000C15 8GB
Kingston KHX16 4GB
Samsung M471A1G43EB1-CRC 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9965600-033.A00G 16GB
Samsung M378A5244CB0-CTD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
报告一个错误
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Bug description
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