AMD R5S38G1601U2S 8GB vs Crucial Technology BL8G32C16U4W.M8FE1 8GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Crucial Technology BL8G32C16U4W.M8FE1 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

Crucial Technology BL8G32C16U4W.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4W.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

19.3 15.4

测试中的平均数值
更快的写入速度，GB/s

14.9 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

15.4 19.3
写入速度，GB/s

9.2 14.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2581 3495

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Samsung M471A1K43DB1-CWE 8GB

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Chun Well Technology Holding Limited D4U0832161B 8GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB