STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3200C16-8GTZKY 8GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值

G Skill Intl F4-3200C16-8GTZKY 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZKY 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 63

左右 -97% 更低的延时
更快的写入速度，GB/s

12.7 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3200C16-8GTZKY 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 32
读取速度，GB/s

3,231.0 16.3
写入速度，GB/s

1,447.3 12.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2999

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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Corsair CMU32GX4M2C3200C16 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Samsung M378B5273DH0-CH9 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Samsung M393A2K40BB2-CTD 16GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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Kingston 9905624-008.A00G 8GB

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Kingston 9905403-061.A00LF 2GB

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB