Samsung M386B4G70DM0-CMA4 32GB vs Crucial Technology CT16G4SFD8266.C8FBD1 16GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C8FBD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 52

左右 -136% 更低的延时
更快的读取速度，GB/s

18 9.7

测试中的平均数值
更快的写入速度，GB/s

14.3 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 22
读取速度，GB/s

9.7 18.0
写入速度，GB/s

7.2 14.3
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2173 3430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C17-8GFT 8GB

G Skill Intl F4-2400C17-8GFT 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Kingston 9905678-028.A00G 8GB

Kingston 9905678-028.A00G 8GB

Crucial Technology CT102464BF160B.M16 8GB

Crucial Technology CT102464BF160B.M16 8GB

G Skill Intl F4-3200C14-8GVR 8GB

G Skill Intl F4-3200C14-8GVR 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Kingston 9905625-030.A00G 8GB

Kingston 9905625-030.A00G 8GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Kingston 9965589-030.D01G 8GB

Kingston 9965589-030.D01G 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Corsair CMU32GX4M2C3333C16 16GB

Corsair CMU32GX4M2C3333C16 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Kingston MSISID4S9S8ME-8 8GB

Kingston MSISID4S9S8ME-8 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

ASint Technology SLZ302G08-MDJHB 2GB

ASint Technology SLZ302G08-MDJHB 2GB