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Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Samsung M386B4G70DM0-CMA4 32GB vs Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 52
    左右 -63% 更低的延时
  • 更快的读取速度，GB/s
    22.6 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14900
    左右 1.43 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 32
  • 读取速度，GB/s
    9.7 left arrow 22.6
  • 写入速度，GB/s
    7.2 left arrow 16.4
  • 内存带宽，mbps
    14900 left arrow 21300
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 3837

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905595-011.A00LF 2GB
Kingston 9905595-011.A00LF 2GB
Kingston 99U5458-001.A00LF 2GB
Kingston 99U5458-001.A00LF 2GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Corsair CMR64GX4M8C3200C16 8GB
Corsair CMR64GX4M8C3200C16 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston 9965604-027.D00G 8GB
Kingston 9965604-027.D00G 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Kingston 9905734-063.A00G 32GB
Kingston 9905734-063.A00G 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C16-8GTRS 8GB
G Skill Intl F4-3600C16-8GTRS 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Samsung M393A2K43BB1-CPB 16GB
Samsung M393A2K43BB1-CPB 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMR32GX4M2F3600C18 16GB
Corsair CMR32GX4M2F3600C18 16GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Corsair CMD16GX4M4A2666C16 4GB
Corsair CMD16GX4M4A2666C16 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Golden Empire CL15-17-17 D4-3000 8GB
Golden Empire CL15-17-17 D4-3000 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM