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Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

Samsung M386B4G70DM0-CMA4 32GB vs Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 52
    左右 -79% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 14900
    左右 1.29 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 29
  • 读取速度，GB/s
    9.7 left arrow 17.9
  • 写入速度，GB/s
    7.2 left arrow 15.9
  • 内存带宽，mbps
    14900 left arrow 19200
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 3501

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-2666C18-8GFX 8GB
G Skill Intl F4-2666C18-8GFX 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-2133C15-4GRR 4GB
G Skill Intl F4-2133C15-4GRR 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Chun Well Technology Holding Limited MD4U1632161DCW 16G
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5273CH0-CF8 4GB
Samsung M471B5273CH0-CF8 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3333C16-16GTZ 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Teikon TMA851S6CJR6N-VKSC 4GB
Teikon TMA851S6CJR6N-VKSC 4GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Corsair CMD128GX4M8A2400C14 16GB
Corsair CMD128GX4M8A2400C14 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
内存RAM