Samsung M386B4G70DM0-CMA4 32GB vs Micron Technology 18ASF1G72AZ-2G1A1 8GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Micron Technology 18ASF1G72AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 52

左右 -126% 更低的延时
更快的读取速度，GB/s

17.2 9.7

测试中的平均数值
更快的写入速度，GB/s

13.1 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 23
读取速度，GB/s

9.7 17.2
写入速度，GB/s

7.2 13.1
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2173 2989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1E34RCTV2-BZWS 32GB

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Samsung M393B1K70CH0-CH9 8GB

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Avexir Technologies Corporation T 4GB

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Kingston 9905702-006.A00G 8GB

Kingston 9905702-006.A00G 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMK8GX4M2B4000C19 4GB

Corsair CMK8GX4M2B4000C19 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Kingston HX432C15PB3/16G 16GB

Kingston HX432C15PB3/16G 16GB