Samsung M386B4G70DM0-CMA4 32GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

Micron Technology 4ATF51264HZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 52

左右 -49% 更低的延时
更快的读取速度，GB/s

14.8 9.7

测试中的平均数值
更快的写入速度，GB/s

11.2 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 35
读取速度，GB/s

9.7 14.8
写入速度，GB/s

7.2 11.2
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2173 2336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D26BFSB.8FB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N

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Crucial Technology CT8G4DFD8213.C16FAD1 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK64GX4M4B3200C16 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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AMD R534G1601U1S-UO 4GB

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