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Samsung M386B4G70DM0-CMA4 32GB
Team Group Inc. DDR4 3000 4GB

Samsung M386B4G70DM0-CMA4 32GB vs Team Group Inc. DDR4 3000 4GB

总分
star star star star star
Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分
star star star star star
Team Group Inc. DDR4 3000 4GB

Team Group Inc. DDR4 3000 4GB

差异 规格 评论

差异

Samsung M386B4G70DM0-CMA4 32GB 需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB
报告一个错误
Team Group Inc. DDR4 3000 4GB 需要考虑的原因
Team Group Inc. DDR4 3000 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 52
    左右 -63% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Samsung M386B4G70DM0-CMA4 32GB
Team Group Inc. DDR4 3000 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 32
  • 读取速度，GB/s
    9.7 left arrow 16.7
  • 写入速度，GB/s
    7.2 left arrow 13.1
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2173 left arrow 3064

Samsung M386B4G70DM0-CMA4 32GB RAM的比较

Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB

Team Group Inc. DDR4 3000 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Team Group Inc. DDR4 3000 4GB
Team Group Inc. DDR4 3000 4GB
内存RAM
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Ramaxel Technology RMSA3230KB78HAF2133 8GB
内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
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内存RAM
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Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
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Kingston 99U5469-045.A00LF 4GB
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Super Talent F24EA8GS 8GB
内存RAM
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内存RAM
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G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM
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A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
内存RAM