Samsung M391B1G73BH0-YK0 8GB vs Samsung M391B5673EH1-CH9 2GB

总分

Samsung M391B1G73BH0-YK0 8GB

Samsung M391B1G73BH0-YK0 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

差异规格评论

差异

Samsung M391B1G73BH0-YK0 8GB

需要考虑的原因
Samsung M391B1G73BH0-YK0 8GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 -15% 更低的延时
更快的读取速度，GB/s

12.8 11.3

测试中的平均数值
更快的写入速度，GB/s

9.0 6.2

测试中的平均数值

规格

完整的技术规格清单

Samsung M391B1G73BH0-YK0 8GB

Samsung M391B5673EH1-CH9 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

30 26
读取速度，GB/s

11.3 12.8
写入速度，GB/s

6.2 9.0
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1907 2143

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD8GX3M2A2933C12 4GB

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Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT8G4DFD824A.C16FBD1 8GB

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Kingston K531R8-MIN 4GB

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Apacer Technology 78.CAGP7.C7Z0B 8GB

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Micron Technology 8ATF1G64HZ-3G2E1 8GB

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Samsung M395T2863QZ4-CF76 1GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

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Kingston LV32D4S2S8HD-8 8GB

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Kingston K821PJ-MIB 16GB

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A-DATA Technology DDR3L 1333G 4GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston K1CXP8-MIE 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB