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Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB

Samsung M391B5273CH0-CH9 4GB vs G Skill Intl F4-3200C14-8GTZKO 8GB

总分
star star star star star
Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-3200C14-8GTZKO 8GB

G Skill Intl F4-3200C14-8GTZKO 8GB

差异 规格 评论

差异

Samsung M391B5273CH0-CH9 4GB 需要考虑的原因
Samsung M391B5273CH0-CH9 4GB
报告一个错误
G Skill Intl F4-3200C14-8GTZKO 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GTZKO 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 27
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    21 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 17
  • 读取速度，GB/s
    13.4 left arrow 21.0
  • 写入速度，GB/s
    8.4 left arrow 15.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2275 left arrow 3481

Samsung M391B5273CH0-CH9 4GB RAM的比较

Samsung M391B5273DH0-CH9 4GB
Corsair CMR32GX4M2C3333C16 16GB

G Skill Intl F4-3200C14-8GTZKO 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CMW16GX4M2A2666C16 8GB
Corsair CMW16GX4M2A2666C16 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4800C18-8GTRS 8GB
G Skill Intl F4-4800C18-8GTRS 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
G Skill Intl F4-3200C14-8GTZKO 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston KV0M5R-MIE 8GB
Kingston KV0M5R-MIE 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-4000C16-8GTZRA 8GB
G Skill Intl F4-4000C16-8GTZRA 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Samsung M471A4G43BB1-CWE 32GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
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Kingmax Semiconductor GSJF62F-DA---------- 4GB
内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
INTENSO 5641152 4GB
INTENSO 5641152 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
内存RAM