Samsung M391B5273CH0-CH9 4GB vs G Skill Intl F4-3466C16-8GTZKW 8GB

总分

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

总分

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

差异规格评论

差异

Samsung M391B5273CH0-CH9 4GB

需要考虑的原因
Samsung M391B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

G Skill Intl F4-3466C16-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZKW 8GB

报告一个错误

更快的读取速度，GB/s

17.5 13.4

测试中的平均数值
更快的写入速度，GB/s

12.6 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5273CH0-CH9 4GB

G Skill Intl F4-3466C16-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.4 17.5
写入速度，GB/s

8.4 12.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2275 3104

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR4 3000 2OZ 8GB

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Kingston 9905403-090.A01LF 4GB

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Corsair CMK32GX4M2B3000C15 16GB

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Samsung M391B5273CH0-CH9 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston KVR533D2N4 512MB

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Crucial Technology CT8G4DFS8266.M8FE 8GB

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Kingston X6TCK6-MIE 32GB

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Teikon TMA851U6AFR6N-UHHC 4GB

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