Samsung M391B5273CH0-CH9 4GB vs SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

总分

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

总分

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

差异规格评论

差异

Samsung M391B5273CH0-CH9 4GB

需要考虑的原因
Samsung M391B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 42

左右 36% 更低的延时

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

报告一个错误

更快的读取速度，GB/s

15.7 13.4

测试中的平均数值
更快的写入速度，GB/s

11.9 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5273CH0-CH9 4GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 42
读取速度，GB/s

13.4 15.7
写入速度，GB/s

8.4 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2275 2737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology CT51264BD160B.C16F 4GB

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Apacer Technology 78.D2GF2.4010B 16GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Kingston KHX3200C20S4/16G 16GB

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Kingston MSI16D3LS1KBG/8G 8GB

Kingston MSI16D3LS1KBG/8G 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB