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Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.B1GN3.AZ32B 4GB

Samsung M391B5673EH1-CH9 2GB vs Apacer Technology 78.B1GN3.AZ32B 4GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 69
    左右 62% 更低的延时
Apacer Technology 78.B1GN3.AZ32B 4GB 需要考虑的原因
Apacer Technology 78.B1GN3.AZ32B 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 12.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.B1GN3.AZ32B 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 69
  • 读取速度，GB/s
    12.8 left arrow 16.4
  • 写入速度，GB/s
    9.0 left arrow 9.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 1995

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Apacer Technology 78.B1GN3.AZ32B 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston HP32D4U8S8HC-8XR 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.B1GN3.AZ32B 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C14-8GTZKW 8GB
G Skill Intl F4-3200C14-8GTZKW 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Apacer Technology 78.BAGNF.40C0B 4GB
Apacer Technology 78.BAGNF.40C0B 4GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
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Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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Kingston 9905678-007.A00G 8GB
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AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
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Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-4000C18-16GVK 16GB
G Skill Intl F4-4000C18-16GVK 16GB
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Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Corsair CMR32GX4M4C3333C16 8GB
Corsair CMR32GX4M4C3333C16 8GB
内存RAM
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Kingston 9905471-076.A00LF 8GB
A-DATA Technology DDR4 3000 8GB
A-DATA Technology DDR4 3000 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Gloway International (HK) STK4U2400D17161C 16GB
Gloway International (HK) STK4U2400D17161C 16GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
King Tiger Technology Tigo-2400MHz-8G 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
内存RAM