Samsung M391B5673EH1-CH9 2GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的读取速度，GB/s

15.9 12.8

测试中的平均数值
更快的写入速度，GB/s

12.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

12.8 15.9
写入速度，GB/s

9.0 12.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3023

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP112S64CP6-S6 1GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-2400C15-8GVB 8GB

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Kingston 9905584-016.A00LF 4GB

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G Skill Intl F4-4400C19-16GTZR 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Corsair CMH16GX4M2Z3600C18 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F3-17000CL11-4GBXL 4GB

V-Color Technology Inc. TL48G32S8RRGB16 8GB

V-Color Technology Inc. TL48G32S8RRGB16 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

G Skill Intl F4-3600C19-16GVRB 16GB

G Skill Intl F4-3600C19-16GVRB 16GB