Samsung M391B5673EH1-CH9 2GB vs Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 26

左右 -44% 更低的延时
更快的读取速度，GB/s

20.8 12.8

测试中的平均数值
更快的写入速度，GB/s

15.1 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 18
读取速度，GB/s

12.8 20.8
写入速度，GB/s

9.0 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Kingston 9965669-027.A00G 16GB

Kingston 9965669-027.A00G 16GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Corsair CMK32GX4M4B3733C17 8GB

Corsair CMK32GX4M4B3733C17 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Apacer Technology 78.C1GS7.AUW0B 8GB

Apacer Technology 78.C1GS7.AUW0B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Kingston 9965662-015.A00G 16GB

Kingston 9965662-015.A00G 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Avant Technology J644GU44J1293NF 32GB

Avant Technology J644GU44J1293NF 32GB

Corsair CM3X2G1600C8 2GB

Corsair CM3X2G1600C8 2GB

Corsair CMT128GX4M8C3000C15 16GB

Corsair CMT128GX4M8C3000C15 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CM4B8G2J2400A14K 8GB

Corsair CM4B8G2J2400A14K 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N