Samsung M391B5673EH1-CH9 2GB vs Crucial Technology BLE4G4D26AFEA.8FBD 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

需要考虑的原因
Crucial Technology BLE4G4D26AFEA.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

18.2 12.8

测试中的平均数值
更快的写入速度，GB/s

14.1 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

12.8 18.2
写入速度，GB/s

9.0 14.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 3012

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M3 78T2953EZ3-CF7 1GB

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King Tiger Technology Tigo-X3-3200MHz-8G 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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G Skill Intl F4-2666C15-16GVR 16GB

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Asgard VML41UG-MIC1U22T1 8GB

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Peak Electronics 256X64M-67E 2GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Crucial Technology BL8G32C16U4RL.M8FE1 8GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

Zotac Technology Ltd OD48G32S816-ZHC 8GB

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Patriot Memory (PDP Systems) PSD48G213381 8GB

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AMD R748G2133U2S-UO 8GB

AMD R748G2133U2S-UO 8GB

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Kingston 9965604-008.D00G 16GB

Kingston 9965604-008.D00G 16GB