Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT16G4SFRA32A.M16FRS 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 51

左右 49% 更低的延时

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

报告一个错误

更快的读取速度，GB/s

16.1 12.8

测试中的平均数值
更快的写入速度，GB/s

13.5 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 51
读取速度，GB/s

12.8 16.1
写入速度，GB/s

9.0 13.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 2778

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology CT16G4SFRA32A.M16FRS 16GB

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Samsung M471B5273DH0-CH9 4GB

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Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CMD64GX4M4A2400C14 16GB

Corsair CMD64GX4M4A2400C14 16GB

PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Crucial Technology BL16G36C16U4W.M16FE1 16GB

Crucial Technology BL16G36C16U4W.M16FE1 16GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB