Samsung M391B5673EH1-CH9 2GB vs Essencore Limited IM4AGS88N24-FFFHA0 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Essencore Limited IM4AGS88N24-FFFHA0 16GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

Essencore Limited IM4AGS88N24-FFFHA0 16GB

需要考虑的原因
Essencore Limited IM4AGS88N24-FFFHA0 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

17.2 12.8

测试中的平均数值
更快的写入速度，GB/s

14.0 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

12.8 17.2
写入速度，GB/s

9.0 14.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 3126

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Kingston 2G-UDIMM 2GB

Kingston 2G-UDIMM 2GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

G Skill Intl F4-2133C15-4GNT 4GB

G Skill Intl F4-2133C15-4GNT 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK16GX4M2A2133C13 8GB

Corsair CMK16GX4M2A2133C13 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

DSL Memory D4SH1G081SH26A-C 8GB

DSL Memory D4SH1G081SH26A-C 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Corsair CM4X8GF2666Z16K4 8GB

Corsair CM4X8GF2666Z16K4 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Transcend Information TS1GLH64V1H 8GB

Transcend Information TS1GLH64V1H 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB